|
Polished Wafer Specifications
| Diameter |
76.2 ±
0.5mm |
50.8 ±
0.4mm |
| Thickness |
510 ± 10m
m |
375 ± 10m
m |
| |
635 ± 15m
m |
510 ± 10m
m |
| Orientation
Flat Length |
22 ± 2 mm |
16 ± 2 mm |
| Index Flat
Length |
11 ± 2 mm |
8 ± 2mm |
Orientation
Off Orientation
Orientation Flat (OF)
Index Flat (IF)
Front Surface
Back Surface |
(100)±0.1°
Up to 6°± 0.1° towards specified plane
[0
]±0.2°
[0
1]±1° , Clockwise from (OF)
Polished
Polished or Lapped & Etched |
Electrical and Crystallographic
Properties of InP Wafers
|
DOPANT |
Carrier
Concentration (cm -3) |
Defect Density
(cm-2) |
|
|
2" diam |
3" diam. |
|
Undoped, n-type |
<5 x 1015 |
4 x 104 |
4 x 104 |
|
Sn doped |
(0.5-2) x 1018 |
(2-4) x 104 |
4 x 104 |
|
S doped |
(3-6) x 1018 |
500 |
1000 |
|
Zn doped, p-type |
(2-4) x 1018 |
500 |
1000 |
|
Fe doped, insulating |
4.5 x 108 (typ.) |
(2-4) x 104 |
4 x 104 |
|
