CrystaComm has developed a process for the rapid synthesis of InP by the injection of Phosphorus to
B₂O₃ encapsulated Indium in a high pressure crystal puller.  The material is synthesized from the phosphorus rich side in the phase diagram, resulting its crucible shaped fully stochiometric practically single crystalline, 146mm diameter, 3kg ingots.

In addressing the growth of InP single crystal by the liquid encapsulation Czochralski process, CrystaComm developed a thermal environment that minimizes the thermal gradients during and subsequent to growth.  Such a thermal environment maintains a practically flat solid liquid interface throughout the growth cycle, resulting in high dopant uniformity and low defect density.

CrystaComm sells a variety of wafers including
100mm SI InP as well as other InP Wafers customized to the client's needs.